Published March 2021 | Version v1
Journal article Metadata-only

Quantum transport in hBN/graph ene superlattices. From valley Hall effect to single electron transistors

Creators

  • 1. National Institute for Materials Science, International Center for Materials Nanoarchitectonics, Tsukuba, Ibaraki (Japan)
  • 2. Kioxia Corporation, Tokyo (Japan)
  • 3. Gunma University, Graduate School of Science and Technology, Kiryu, Gunma (Japan)
  • 4. Tokyo Denki University, School of Engineering, Tokyo (Japan)

Description

We review recent progress on hBN/graphene(Gr) superlattices. Focus is on the valley Hall effect and the single electron transistor. A novel fabrication method for hBN/Gr stacks ('bubble-free transfer technique') is also discussed. (author)

Additional details

Additional titles

Original title (Japanese)
hBN/グラフェン超格子の量子輸送.バレーホール効果から単一電子トランジスタまで

Publishing Information

Journal Title
Kotai Butsuri
Journal Volume
56
Journal Issue
3
Series
雑誌名:固体物理
Journal Page Range
p. 131-143
ISSN
0454-4544

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
52110286
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
BORON NITRIDES; CARRIER DENSITY; CRYOSTATS; DEGREES OF FREEDOM; DIRAC FORM FACTORS; ELECTRIC CONDUCTIVITY; ELECTRON TRANSFER; EQUIVALENT CIRCUITS; GRAPHENE; HALL EFFECT; MAGNETIC FIELDS; QUANTUM SYSTEMS; SUPERLATTICES; TRANSCRIPTION; TRANSISTORS
Descriptors DEC
BORON COMPOUNDS; CARBON; CONTROL EQUIPMENT; DIMENSIONLESS NUMBERS; ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; ELEMENTS; EQUIPMENT; FORM FACTORS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PARTICLE PROPERTIES; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; THERMOSTATS

Optional Information

Notes
21 refs., 12 figs.