Published August 6, 2001 | Version v1
Journal article

Spin Injection Across a Heterojunction: A Ballistic Picture

Description

Spin injection across heterojunctions plays a decisive role in the new field of spintronics. Within the ballistic transport regime, we state a general expression for the spin-injection rate in a heterojunction made of two ballistic electrodes. Both the spin-orbit interaction and interface scattering effect are taken into account. Our model is consistent with the well-documented results of ferromagnetic-metal junctions. It explains the recent experimental results of a dilute-magnetic-semiconductor/semiconductor junction and predicts solutions to enhance the spin-injection rate across a ferromagnetic-semiconductor junction

Additional details

Publishing Information

Journal Title
Physical Review Letters
Journal Volume
87
Journal Issue
6
Journal Page Range
p. 066803-066803.4
ISSN
0031-9007

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
32064296
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ELECTRODES; HETEROJUNCTIONS; L-S COUPLING; SCATTERING; SPIN; TRANSPORT
Descriptors DEC
ANGULAR MOMENTUM; COUPLING; INTERMEDIATE COUPLING; PARTICLE PROPERTIES; SEMICONDUCTOR JUNCTIONS

Optional Information

Notes
Othernumber: PRLTAO000087000006066803000001; 032132PRL
Funding organization
(US)