Published December 2019 | Version v1
Journal article

Radiation-resistant magnetic field sensors based on SiO2(Ni)/Si structures

  • 1. Scientific and Practical Materials Research Centre of the National Academy of Sciences of Belarus, Minsk, 220072 (Belarus)

Description

Structures containing a nickel precipitate in the pores of silicon oxide were obtained by ion-track technology. The SiO2(Ni)/Si structures were exposed under irradiation with 60Co gamma quanta with energy of 1.25 MeV at the dose up to 1.5 × 105 Gy. The electrophysical and galvanomagnetic characteristics of the SiO2(Ni)/Si structures before and after irradiation were studied and the influence of ionizing radiation on their electrical resistivity and magnetoresistance was discussed. The use of SiO2(Ni)/Si structures as a sensitive element of radiation-resistant magnetic field sensors was proposed.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nimb.2018.12.015

Additional details

Identifiers

DOI
10.1016/j.nimb.2018.12.015;
PII
S0168583X18307250;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
460
Journal Page Range
p. 209-211
ISSN
0168-583X
CODEN
NIMBEU

Conference

Title
10. Swift Heavy Ions in Matter; 28. International Conference on Atomic Collisions in Solids
Acronym
SHIM-ICACS 2018
Dates
1-7 Jul 2018
Place
Caen (France)

Optional Information

Copyright
Copyright (c) 2018 Elsevier B.V. All rights reserved.