Published December 1, 2017 | Version v1
Journal article

A unified treatment of self-sputtering, process gas recycling, and runaway for high power impulse sputtering magnetrons

  • 1. Department of Space and Plasma Physics, School of Electrical Engineering, KTH—Royal Institute of Technology, SE-100 44, Stockholm (Sweden)
  • 2. Laboratoire de Physique des Gaz et Plasmas—LPGP, UMR 8578 CNRS, Université Paris-Sud, Université Paris-Saclay, F-91405 Orsay Cedex (France)

Description

The combined processes of self-sputter (SS)-recycling and process gas recycling in high power impulse magnetron sputtering (HiPIMS) discharges are analyzed using the generalized recycling model (GRM). The study uses experimental data from discharges with current densities from the direct current magnetron sputtering range to the HiPIMS range, and using targets with self-sputter yields Y SS from ≈ 0.1 to 2.6. The GRM analysis reveals that, above a critical current density of the order of J crit ≈ 0.2 A cm−2, a combination of self-sputter recycling and gas-recycling is generally the case. The relative contributions of these recycling mechanisms, in turn, influence both the electron energy distribution and the stability of the discharges. For high self-sputter yields, above Y SS ≈ 1, the discharges become dominated by SS-recycling, contain few hot secondary electrons from sheath energization, and have a relatively low electron temperature T e. Here, stable plateau values of the discharge current develop during long pulses, and these values increase monotonically with the applied voltage. For low self-sputter yields, below Y SS ≈ 0.2, the discharges above J crit are dominated by process gas recycling, have a significant sheath energization of secondary electrons and a higher T e, and the current evolution is generally less stable. For intermediate values of Y SS the discharge character gradually shifts between these two types. All of these discharges can, at sufficiently high discharge voltage, give currents that increase rapidly in time. For such cases we propose that a distinction should be made between 'unlimited' runaway and 'limited' runaway: in unlimited runaway the current can, in principle, increase without a limit for a fixed discharge voltage, while in limited runaway it can only grow towards finite, albeit very high, levels. For unlimited runway Y SS > 1 is found to be a necessary criterion, independent of the amount of gas-recycling in the discharge. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6595/aa959b

Additional details

Identifiers

Publishing Information

Journal Title
Plasma Sources Science and Technology
Journal Volume
26
Journal Issue
12
Journal Page Range
[13 p.]
ISSN
0963-0252

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52042187
Subject category
S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
Descriptors DEI
CRITICAL CURRENT; CURRENT DENSITY; DIRECT CURRENT; ELECTRIC POTENTIAL; ELECTRON TEMPERATURE; ELECTRONS; ENERGY SPECTRA; MAGNETRONS; PULSES
Descriptors DEC
CURRENTS; ELECTRIC CURRENTS; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTARY PARTICLES; EQUIPMENT; FERMIONS; LEPTONS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; SPECTRA