Published April 30, 2008 | Version v1
Journal article

The influence of thiourea on copper electrodeposition: Adsorbate identification and effect on electrochemical nucleation

  • 1. Research Center for Energy Conversion and Storage, School of Chemical and Biological Engineering, College of Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of)
  • 2. Fuel Cell Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791 (Korea, Republic of)
  • 3. Department of Advanced Nano-tech Development, DongbuAnam Semiconductor, 474-1 Sangwoo-ri, Kamgok-myun, Umsung-kun, Chungbuk, 369-852 (Korea, Republic of)

Description

The effect of thiourea on copper deposition onto a copper seed layer from an electrolyte composed of CuSO4, H2SO4, deionized water, and thiourea was investigated. Even in the presence of very low concentrations of thiourea, extremely smooth and bright copper deposits were obtained. From the results of X-ray photoelectron spectroscopy, Auger electron spectroscopy, and electrochemical analyses, thiourea was found to react with copper or copper ions leading to the generation of CuS. CuS adsorption onto the copper seed layer seemed to inhibit the initial nucleation of the copper adions, resulting in the formation of smaller Cu grains compared to those forming in the absence of thiourea. CuS was observed to cover all active sites of the 1 cm2 copper seed layer above 0.017 g/L thiourea. The surface roughness as well as the mean grain size of the deposits also approached minimum values above this thiourea concentration. Adsorbed CuS was incorporated into the deposits during electroplating, which was believed to be the major factor for the increased resistivity of the deposits

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2007.06.069

Additional details

Identifiers

DOI
10.1016/j.tsf.2007.06.069;
PII
S0040-6090(07)01036-X;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
516
Journal Issue
12
Journal Page Range
p. 3761-3766
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.