Published July 15, 2011 | Version v1
Journal article

Mechanisms of Postsynthesis Doping of Boron Nitride Nanostructures with Carbon from First-Principles Simulations

  • 1. Department of Applied Physics, Post Office Box 1100, FI-00076 Aalto University (Finland)
  • 2. Department of Physics, University of Helsinki, Post Office Box 43, FI-00014 (Finland)

Description

Electron-beam-mediated postsynthesis doping of boron-nitride nanostructures with carbon atoms [Nature (London) 464, 571 (2010); J. Am. Chem. Soc. 132, 13 692 (2010)] was recently demonstrated, thus opening a new way to control the electronic properties of these systems. Using density-functional theory static and dynamic calculations, we show that the substitution process is governed not only by the response of such systems to irradiation, but also by the energetics of the atomic configurations, especially when the system is electrically charged. We suggest using spatially localized electron irradiation for making carbon islands and ribbons embedded into BN sheets. We further study the magnetic and electronic properties of such hybrid nanostructures and show that triangular carbon islands embedded into BN sheets possess magnetic moments, which can be switched on and off by electrically charging the structure.

Additional details

Publishing Information

Journal Title
Physical Review Letters
Journal Volume
107
Journal Issue
3
Journal Page Range
p. 035501-035501.4
ISSN
0031-9007
CODEN
PRLTAO

Optional Information

Notes
(c) 2011 American Institute of Physics