Published March 24, 2003
| Version v1
Journal article
Ultralow copper drift in inductively coupled plasma silicon carbide dielectrics
Creators
- 1. National Nano Device Laboratories, Hsinchu, Taiwan 30050 (China)
Description
This study investigates how copper penetration into inductively coupled plasma (ICP) trimethylsilane-based hydrogenated amorphous silicon carbide (a-SiCx:H) dielectric barriers depends on the films' hydrogen concentrations. Depositing ICP a-SiCx:H films with low hydrogen concentrations (or few defect sites), copper drift rate in such films stressed at around 200 deg. C, 1 MV/cm, is as low as 105 ions/cm2 s, two to five times lower than those in plasma-enhanced chemical-vapor-deposited (PECVD) a-SiCx:H and nitride barriers. Accordingly, the time-to-breakdown of ICP a-SiCx:H subjected to bias-temperature stress at above 200 deg. C, 2.0-2.75 MV/cm, is almost one order of magnitude longer than that of PECVD a-SiCx:H
Additional details
Identifiers
- DOI
- 10.1063/1.1563052;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 82
- Journal Issue
- 12
- Journal Page Range
- p. 1914-1916
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35032395
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- BREAKDOWN; CHEMICAL VAPOR DEPOSITION; COPPER; DIFFUSION; DIFFUSION BARRIERS; EXPERIMENTAL DATA; HYDROGENATION; INTERFACES; ION IMPLANTATION; PLASMA; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDES; THIN FILMS
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHEMICAL COATING; CHEMICAL REACTIONS; DATA; DEPOSITION; ELEMENTS; FILMS; INFORMATION; METALS; NUMERICAL DATA; SILICON COMPOUNDS; SURFACE COATING; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2003 American Institute of Physics.