Published December 11, 1984 | Version v1
Patent Metadata-only

Low-loss microwave dielectric material

Creators

Description

A low-loss microwave dielectric material comprising a sinter of a mixture of a perovskite type structure compound oxide comprising singly or mainly Ba(Zn /sub 1/3/ Ta /sub 2/3/ )O3 and Ba(Mg /sub 1/3/ Ta /sub 2/3/ )O3 with a small amount of Mn. Mn addition not only favorably affects sinterability to lower the required sintering temperature but also advantageously heightens the unloaded Q factor of the resulting sinter in an SHF band

Availability note (English)

U.S. Commissioner of Patents, Washington, D.C. 20231, USA, $.50.

Additional details

Publishing Information

Imprint Pagination
v p.
IPC:
Int. Cl. C04B 35/00.
IPC
Int. Cl. C04B 35/00.
Patent number
US patent document 4,487,842/A/

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
16077248
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Non-conventional Literature
Descriptors DEI
BARIUM OXIDES; CHEMICAL COMPOSITION; DIELECTRIC MATERIALS; MAGNESIUM COMPOUNDS; MANGANESE; MICROWAVE RADIATION; SINTERING; TANTALUM COMPOUNDS; ZINC COMPOUNDS
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; BARIUM COMPOUNDS; CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELEMENTS; FABRICATION; MATERIALS; METALS; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS

Optional Information

Notes
PAT-APPL-495807.