Published August 2001 | Version v1
Journal article

Preparation and properties of isotopically pure polycrystalline silicon

  • 1. Electromechanical Plant, St. Petersburg, 198096 (Russian Federation)
  • 2. Khlopin Radium Institute, St. Petersburg, 194021 (Russian Federation)
  • 3. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021 (Russian Federation)

Description

A method for extracting silicon isotopes was developed. Polycrystalline 28Si, 29Si, and 30Si samples isotopically enriched to 99.95, 99.5, and 99.9%, respectively, were prepared. Energies of optical phonons in the isotopically pure samples show the expected dependence on the average atomic mass

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
35
Journal Issue
8
Journal Page Range
p. 877-879
ISSN
1063-7826
CODEN
SMICES

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 35, 913-916 (No. 8, 2001); (c) 2001 MAIK ''Nauka / Interperiodica''.