Thermoreflectance temperature imaging of integrated circuits: calibration technique and quantitative comparison with integrated sensors and simulations
- 1. Unite Propre de Recherches (UPR) A0005 du Centre National de Recherche Scientifique (CNRS), Universite Pierre et Marie Curie - UPMC, Ecole Superieure de Physique et Chimie Industrielles - ESPCI, Laboratoire d'Optique, 10 Rue Vauquelin, 75005 Paris (France)
- 2. ST Microelectronics, Via Olivetti 2, 20041 Agrate Brianza (Italy)
- 3. Unite Propre de Recherches (UPR) A0005 du Centre National de Recherche Scientifique (CNRS), Universite Pierre et Marie Curie -UPMC, Ecole Superieure de Physique et Chimie Industrielles - ESPCI, Laboratoire d'Optique, 10 Rue Vauquelin, 75005 Paris (France)
Description
Camera-based thermoreflectance microscopy is a unique tool for high spatial resolution thermal imaging of working integrated circuits. However, a calibration is necessary to obtain quantitative temperatures on the complex surface of integrated circuits. The spatial and temperature resolutions reached by thermoreflectance are excellent (360 nm and 2.5 x 10-2 K in 1 min here), but the precision is more difficult to assess, notably due to the lack of comparable thermal techniques at submicron scales. We propose here a Peltier element control of the whole package temperature in order to obtain calibration coefficients simultaneously on several materials visible on the surface of the circuit. Under high magnifications, movements associated with thermal expansion are corrected using a piezo electric displacement and a software image shift. This calibration method has been validated by comparison with temperatures measured using integrated thermistors and diodes and by a finite volume simulation. We show that thermoreflectance measurements agree within a precision of ±2.3% with the on-chip sensors measurements. The diode temperature is found to underestimate the actual temperature of the active area by almost 70% due to the thermal contact of the diode with the substrate, acting as a heat sink
Availability note (English)
Available online at http://stacks.iop.org/0022-3727/39/4159/d6_19_007.pdf or at the Web site for the Journal of Physics. D, Applied Physics (ISSN 1361-6463) http://www.iop.org/Additional details
Identifiers
- URL
- http://stacks.iop.org/0022-3727/39/4159/d6_19_007.pdf; http://www.iop.org/;
- DOI
- 10.1088/0022-3727/39/19/007;
- PII
- S0022-3727(06)21138-0;
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 39
- Journal Issue
- 19
- Journal Page Range
- p. 4159-4166
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38006820
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CALIBRATION; CAMERAS; COMPARATIVE EVALUATIONS; COMPUTER CODES; HEAT SINKS; INTEGRATED CIRCUITS; MICROSCOPY; SIMULATION; SPATIAL RESOLUTION; SUBSTRATES; SURFACES; THERMAL EXPANSION; THERMISTORS
- Descriptors DEC
- ELECTRONIC CIRCUITS; EVALUATION; EXPANSION; MICROELECTRONIC CIRCUITS; RESOLUTION; SEMICONDUCTOR DEVICES; SINKS