Published October 2013 | Version v1
Journal article Metadata-only

Bipolar Resistive Switching Characteristics of TiN/HfOx/ITO Devices for Resistive Random Access Memory Applications

Creators

  • 1. State Key Lab of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072 (China)

Description

Resistive switching characteristics of hafnium oxide are studied for possible nonvolatile memory device applications. The HfOx films with different oxygen contents are deposited by rf magnetron sputtering under different O2 flow rates. The films are amorphous, and the stoichiometric of the film is improved by increasing the O2 flow rate. Current-voltage characteristics of the TiN/HfOx/ITO device are investigated with 1 mA compliance. The bipolar resistive switching behavior is observed for the TiN/HfOx/ITO structure, and the resistive switching mechanism of the TiN/HfOx/ITO structure is explained by trap-controlled space charge limit current conduction

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/30/10/107302

Additional details

Identifiers

DOI
10.1088/0256-307X/30/10/107302;

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
30
Journal Issue
10
Journal Page Range
[4 p.]
ISSN
0256-307X
CODEN
CPLEEU

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45003220
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Descriptors DEI
AMORPHOUS STATE; ELECTRIC CONDUCTIVITY; FLOW RATE; HAFNIUM OXIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; INTERFACES; MEMORY DEVICES; OXYGEN; RANDOMNESS; SPACE CHARGE; SPUTTERING; STOICHIOMETRY; THIN FILMS; TITANIUM NITRIDES; TRAPS
Descriptors DEC
CHALCOGENIDES; ELECTRICAL PROPERTIES; ELEMENTS; FILMS; HAFNIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; REFRACTORY METAL COMPOUNDS; SEMICONDUCTOR JUNCTIONS; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS