Published November 15, 2008
| Version v1
Journal article
Thermal transport properties of nanocrystalline Bi-Sb-Te thin films prepared by sputter deposition
Creators
- 1. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013 (China)
- 2. Thermal Management Materials and Device Laboratory, Industrial Technology Research Institute, Hsinchu, Taiwan 31040 (China)
Description
Grain-size dependent thermal conductivity of sputtered nanocrystalline Bi-Sb-Te thin films was measured by a 3ω method. By changing deposition temperature from 100 deg. C to room temperature, the mean grain size of the Bi-Sb-Te films decreased from 83 to 26 nm and the lattice thermal conductivity reduced from 0.79 to 0.45 W/mK proportionally. The effect of grain boundary on lattice thermal conductivity can be described by an effective thermal boundary resistance that was determined in the range of 0.56-1.8x10-8 m2K/W for the nanocrystalline Bi-Sb-Te thin films studied
Additional details
Identifiers
- DOI
- 10.1063/1.3026728;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 104
- Journal Issue
- 10
- Journal Page Range
- p. 104312-104312.5
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40059544
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANTIMONY ALLOYS; BISMUTH ALLOYS; CRYSTALS; DEPOSITION; GRAIN BOUNDARIES; GRAIN SIZE; NANOSTRUCTURES; SPUTTERING; TELLURIUM ALLOYS; TEMPERATURE RANGE 0273-0400 K; TERNARY ALLOY SYSTEMS; THERMAL BOUNDARY RESISTANCE; THERMAL CONDUCTIVITY; THIN FILMS
- Descriptors DEC
- ALLOY SYSTEMS; ALLOYS; FILMS; MICROSTRUCTURE; PHYSICAL PROPERTIES; SIZE; TEMPERATURE RANGE; THERMODYNAMIC PROPERTIES
Optional Information
- Notes
- (c) 2008 American Institute of Physics