Highly enhanced performance of integrated piezo photo-transistor with dual inverted OLED gate and nanowire array channel
Creators
- 1. Key Laboratory for Precision and Non-traditional Machining Technology of the Ministry of Education, Dalian University of Technology, Dalian, 116024 (China)
- 2. Center for Materials for Information Technology, The University of Alabama, Tuscaloosa, AL, 35487 (United States)
- 3. School of Microelectronics, Shandong University, Jinan, 250100 (China)
- 4. Department of Electrical and Computer Engineering, Penn State Behrend, Erie, PA, 16563 (United States)
- 5. Department of Mechanical Engineering, University of Maryland, College Park, MA, 20742 (United States)
Description
Highlights: • Duel piezo photo-transistor (DPPT) based on piezo invert-structured OLED as gate control and piezo nanowire array as signal channel. • Dramatic enhancement is realized by piezo-phototronic-effect in both stimulation gate control and the signal channel. • The devices under mechanical deformation yield a current on/off ratio of 106, 80 times higher than that without deformation. -- Abstract: Piezo-phototronic-effect possesses potential revolutionary applications in optoelectronic systems, malleable optical processing, biomedical diagnostics, and communication. Here, we report a novel structural device, dual piezo photo-transistor (DPPT), based on piezo invert-structured organic light emitting diode (OLED) as gate control and piezo nanowires (NWs) array as charge transport channel to realize tunable photoelectric properties dramatic enhancement achieved by piezo-phototronic-effect in both stimulation gate electrode and the metal-semiconductor-metal channel. Systematic analyses are carried out on electron generated as well as the electric field distribution under various bending/strain direction and degree with the c-direction ZnO NWs grown both vertically and horizontally in OLED gate and NW channel, respectively. The piezo-phototronic transistors under mechanical deformation yield a current on/off ratio of 106, more than 80 times higher as compared to the one without deformation. The enhancement of the integrated DPPTs, taking advantage of piezo-phototronic effect, may open up opportunities in innovative applications in various optoelectronic devices and flexible integrated systems.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nanoen.2019.104101Additional details
Identifiers
- DOI
- 10.1016/j.nanoen.2019.104101;
- PII
- S2211285519308080;
Publishing Information
- Journal Title
- Nano Energy (Print)
- Journal Volume
- 66
- Journal Page Range
- vp.
- ISSN
- 2211-2855
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54123016
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- BENDING; ELECTRIC FIELDS; ELECTRONS; LIGHT EMITTING DIODES; METALS; NANOWIRES; OPTOELECTRONIC DEVICES; PERFORMANCE; SEMICONDUCTOR MATERIALS; SIGNALS; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; DEFORMATION; ELECTRONIC EQUIPMENT; ELEMENTARY PARTICLES; ELEMENTS; EQUIPMENT; FERMIONS; LEPTONS; MATERIALS; NANOSTRUCTURES; OPTICAL EQUIPMENT; OXIDES; OXYGEN COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TRANSDUCERS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2019 Elsevier Ltd. All rights reserved.