Published December 2013 | Version v1
Miscellaneous

High-frequency dielectric measurements of TIIn1-xErxSe2 crystals

  • 1. ANAS? Institute of Physics, Baku (Azerbaijan)

Description

The purpose of this work is to study the dielectric properties of TIInSe2 and TIInSe2-Er single crystals in alternating electric fields, definition of the main dielectric coefficients and to establish the nature of dielectric losses. It was conducted dielectric measurements of a TIInSe2 single crystal in the frequency range 5*104 - 3.5*107 Hz, which allowed to detect the nature of relaxation dispersion of the dielectric constant and dielectric losses in the nature of a single crystal. The effect of partial substitution of indium in TIInSe2-Er by erbium on electrical and dielectric properties of the crystals was studied

Availability note (English)

Available from the Institute of Radiation Problems, Baku (AZ)
Part of:
Microelectronic converters and devices based on them. Materials of the seventh international scientific and technical conference. Devoted to 90th aniversary of Haydar Aliyev

Additional details

Additional titles

Original title (Russian)
Высокочастотные диелектрические измерения кристаллов TIIn<суб>1</суб>-xер<суб>x</суб>Се<суб>2</суб>

Publishing Information

Publisher
The printing house of Sumgayit State University
Imprint Place
Sumgayit (Azerbaijan)
Imprint Title
Microelectronic converters and devices based on them. Materials of the seventh international scientific and technical conference. Devoted to 90th aniversary of Haydar Aliyev
Imprint Pagination
216 p.
Journal Page Range
p. 144-147

Conference

Title
7. international scientific and technical conference on microelectronic converters and devices based on them
Dates
27-29 Nov 2013
Place
Sumgayit (Azerbaijan)

Optional Information

Notes
4 figs; 5 refs Imprint:Mikroelektronnye preobrazovateli i pribory na ix osnove. Materialy sedmoy mejdunarodnoy nauchno-texnicheskoy konferentsii. Posvashaetsa 90letiyu Geydara Aliyeva
Secondary number(s)
SEC--4