Atomic control of substrate termination and heteroepitaxial growth of SrTiO3/LaAlO3 films
Creators
- 1. Seoul National Univ., Seoul (Korea, Republic of)
- 2. Pohang University of Science and Technology, Pohang (Korea, Republic of)
Description
The roles of substrate termination in the growth behaviors of SrTiO3 (STO) films were investigated. With heat treatment and an atomic layer deposition technique, LaAlO3 (LAO) substrates with two kinds of terminations, i.e., LaO- and AlO2-terminated ones, could be prepared. On top of them STO films were grown by using laser molecular beam epitaxy. In the case of the STO/LaO-LAO film, a transition from layer-by-layer growth to island growth was observed after growth of about 10 monolayers (ML). On the other hand, the STO/AlO2-LAO film could be grown in a layer-by-layer mode with a flat surface up to 40 ML. We suggest that defects induced by charge compensation influence the strain states and the physical properties of oxide heterostructures significantly
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 36
- Journal Issue
- 6
- Series
- 21 refs, 6 figs
- Journal Page Range
- p. 444-448
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 34087012
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINATES; DEPOSITION; FILMS; HETEROJUNCTIONS; LANTHANUM COMPOUNDS; LAYERS; MOLECULAR BEAM EPITAXY; STRONTIUM TITANATES; SUBSTRATES
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; ALUMINIUM COMPOUNDS; CRYSTAL GROWTH METHODS; EPITAXY; OXYGEN COMPOUNDS; RARE EARTH COMPOUNDS; SEMICONDUCTOR JUNCTIONS; STRONTIUM COMPOUNDS; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS