Published 1987
| Version v1
Book
Submicron device physics for numerical simulations
Description
Recent advances in physics for submicron, bipolar-crystalline devices suggest principles that are valid when modeling bipolar devices with noncrystalline regions such as those with polysilicon, polycrystalline silicon, and hydrogenated amorphous silicon emitters. These principles from crystalline device physics are summarized, and their implications for the noncrystalline regions of bipolar devices are given
Additional details
Publishing Information
- Publisher
- SPIE Society of Photo-Optical Instrumentation Engineers.
- Imprint Place
- Bellingham, WA (USA)
- Imprint Title
- Physics of amorphous semiconductor devices
- Journal Page Range
- p. 134-140.
Conference
- Title
- Physics of amorphous semiconductor devices.
- Dates
- 15-16 Jan 1987.
- Place
- Los Angeles, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19104395
- Subject category
- S36: MATERIALS SCIENCE; S99: GENERAL AND MISCELLANEOUS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; ELECTRONIC EQUIPMENT; HYDROGENATION; MATHEMATICAL MODELS; NUMERICAL SOLUTION; PHYSICS; POLYCRYSTALS; SILICON
- Descriptors DEC
- CHEMICAL REACTIONS; CRYSTALS; ELEMENTS; EQUIPMENT; SEMIMETALS