Published November 2004
| Version v1
Journal article
Characteristics of tunable laser based on laterally coupled semiconductor optical amplifier and laser diode
- 1. The University of Tokyo, Tokyo (Japan)
- 2. Korea Institute of Science and Technology, Seoul (Korea, Republic of)
- 3. Pusan National University, Busan (Korea, Republic of)
Description
The proposed tunable laser exhibits a high degree of frequency selectivity and electrically controlled wide wavelength tunability. Also, we have dynamic analysis of the tunable laser based on laterally coupled semiconductor optical amplifier and laser diode. This structure is simulated by using the coupled mode theory and the modified time-domain transfer matrix method. The simulation result yields a tuning range of 48 nm with a side mode suppression ratio around 35 dB.
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 45
- Journal Issue
- 5
- Series
- 9 refs, 4 figs
- Journal Page Range
- p. 1178-1180
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 42014560
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMPLIFIERS; COMMUNICATIONS; COMPUTERIZED SIMULATION; LASERS; MATHEMATICAL MODELS; OPTICAL EQUIPMENT; RUNGE-KUTTA METHOD; SEMICONDUCTOR MATERIALS; TRANSFER MATRIX METHOD; TUNING; WAVELENGTHS
- Descriptors DEC
- CALCULATION METHODS; ELECTRONIC EQUIPMENT; EQUIPMENT; ITERATIVE METHODS; MATERIALS; MATHEMATICAL SOLUTIONS; NUMERICAL SOLUTION; SIMULATION