Published August 27, 2007
| Version v1
Journal article
Initial stages of chain formation in a single layer of (In,Ga)As quantum dots grown on GaAs (100)
Creators
- 1. Institut fuer Physik, Martin-Luther-Universitaet Halle-Wittenberg, Hoher Weg 8, D-06120 Halle (Germany)
- 2. Institut fuer Physik, Humboldt-Universitaet zu Berlin, Newtonstrasse 15, D-12489 Berlin (Germany)
- 3. Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
- 4. Institut fuer Kristallzuechtung, Max-Born-Strasse 2, D-12489 Berlin (Germany)
Description
The self-organized formation of In0.40Ga0.60As quantum dot chains was investigated using x-ray scattering. Two samples were compared grown on GaAs(100) by molecular beam epitaxy. The first sample with a single layer of In0.40Ga0.60As dots shows weak quantum dot alignment and a corresponding elongated shape along [011], while the top layer of a multilayered In0.40Ga0.60As/GaAs sample exhibits extended and highly regular quantum dot chains oriented along [011]. Numerical calculations of the three-dimensional strain fields are used to explain the initial stages of chain formation by anisotropic strain relaxation induced by the elongated dot shape
Additional details
Identifiers
- DOI
- 10.1063/1.2775801;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 91
- Journal Issue
- 9
- Journal Page Range
- p. 093110-093110.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39038335
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANISOTROPY; CRYSTAL GROWTH; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; X-RAY DIFFRACTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; PNICTIDES; SCATTERING
Optional Information
- Notes
- (c) 2007 American Institute of Physics