Published March 31, 2011 | Version v1
Journal article

Sputtered platinum-iridium layers as electrode material for functional electrostimulation

  • 1. Institute of Materials in Electrical Engineering I, RWTH Aachen University, Sommerfeldstr. 24, D-52074 Aachen (Germany)
  • 2. Institute of Electrochemistry and Energy Systems, Bulgarian Academy of Sciences, 1113 Sofia (Bulgaria)

Description

In this study co-sputtered layers of platinum-iridium (PtIr) are investigated as stimulation electrode material. The effects of different sputter parameters on the morphology and the electrochemical behavior are examined. It is shown that films sputtered at the lowest incident energy possess the highest charge storage capacity (CSC). At a Pt:Ir atomic-ratio of 55:45 the obtained CSC of 22 mC/cm2 is enhanced compared to the standard stimulation material platinum (16 mC/cm2) but inferior to iridium which has a CSC of 35 mC/cm2. Long term cyclic voltammetry measurements show that PtIr can be activated which increases the CSC to 29 mC/cm2. Also a change in the film morphology is observed. Sputtered platinum-iridium films promise to combine high mechanical strength and increased charge storage capacity.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2011.01.344

Additional details

Identifiers

DOI
10.1016/j.tsf.2011.01.344;
PII
S0040-6090(11)00409-3;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
519
Journal Issue
11
Journal Page Range
p. 3965-3970
ISSN
0040-6090
CODEN
THSFAP

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42069200
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ELECTROCHEMISTRY; ELECTRODES; IRIDIUM ALLOYS; LAYERS; MORPHOLOGY; PLATINUM ALLOYS; SPUTTERING; STIMULATION; THIN FILMS; VOLTAMETRY
Descriptors DEC
ALLOYS; CHEMISTRY; FILMS; PLATINUM METAL ALLOYS; TRANSITION ELEMENT ALLOYS

Optional Information

Copyright
Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.