Published August 11, 2008
| Version v1
Journal article
Response to 'Comment on 'Stimulated emission from trap electronic states in oxide of nanocrystal Si' ' [Appl. Phys. Lett. 93, 066101 (2008)]
- 1. Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550026 (China)
- 2. Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550003 (China)
Description
no abstract available
Additional details
Identifiers
- DOI
- 10.1063/1.2966346;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 93
- Journal Issue
- 6
- Journal Page Range
- p. 066102-066102.1
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40006783
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; NANOSTRUCTURES; OXIDES; PHOTOLUMINESCENCE; STIMULATED EMISSION
- Descriptors DEC
- CHALCOGENIDES; EMISSION; ENERGY-LEVEL TRANSITIONS; HEAT TREATMENTS; LUMINESCENCE; OXYGEN COMPOUNDS; PHOTON EMISSION
Optional Information
- Notes
- (c) 2008 American Institute of Physics