Bias dependence of synergistic radiation effects induced by electrons and protons on silicon bipolar junction transistors

Bias dependence on synergistic radiation effects caused by 110 keV electrons and 170 keV protons on the current gain of 3DG130 NPN bipolar junction transistors (BJTs) is studied in this paper. Experimental results indicate that the influence induced by 170 keV protons is always enhancement effect during the sequential irradiation. However, the influence induced by 110 keV electrons on the BJT under various bias cases is different during the sequential irradiation. The transition fluence of 110 keV electrons is dependent on the bias case on the emitter–base junction of BJT. - Highlights: • Bias cases can affect the total number of ionization traps. • For displacement damage, bias cases can produce the injection annealing effect. • Electrons show enhancement or mitigation effects during sequential exposures. • Transition fluence is dependent on the bias case