Published March 2013
| Version v1
Journal article
Summary of radiation damage and recovery about BGO scintillation crystals
Creators
- 1. Nuclear Energy Economics and Management Research Center, University of South China, Hengyang (China)
- 2. School of Nuclear Science and Technology, University of South China, Hengyang (China)
Description
This paper introduced the light emitting principle of BGO (Bi4Ge3O12) scintillation crystals, and irradiation experiments at home and abroad. It analyzed the change about the irradiated transmission rate, relative light output and absorption coefficient before and after irradiated. Analysis showed that the main factor of BGO scintillation crystals radiation damage was the capture color center, and could recover by annealing and photon radiation. It introduced the method of improving irradiation resistance of BGO scintillation crystal, and pointed out that doping and changing the crystal growth method were the most important method to improve the radiation resistance properties of crystals. (authors)
Additional details
Publishing Information
- Journal Title
- Journal of Nanhua University. Science and Technology
- Journal Volume
- 27
- Journal Issue
- 1
- Journal Page Range
- p. 1-6
- ISSN
- 1673-0062
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 50061396
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION; ANNEALING; CAPTURE; COLOR CENTERS; CRYSTAL GROWTH METHODS; CRYSTALS; IRRADIATION; PHOTONS; RADIATION EFFECTS; SCINTILLATIONS; VISIBLE RADIATION
- Descriptors DEC
- BOSONS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; HEAT TREATMENTS; MASSLESS PARTICLES; POINT DEFECTS; RADIATIONS; SORPTION; VACANCIES
Optional Information
- Notes
- 7 figs., 25 refs.