Published August 2009
| Version v1
Journal article
Electronic structure of p-type (Ga,Fe)N diluted magnetic semiconductors
- 1. Laboratoire de Magnetisme et de Physique des Hautes Energies, Departement de physique, Faculte des sciences, B.P. 1014, Rabat (Morocco)
- 2. The Institute of Nanotechnology, INANOTECH, Rabat (Morocco)
- 3. Hassan II Academy of Sciences and Technology, Rabat (Morocco)
- 4. Laboratoire de Physique des Hautes Energies, Departement de physique, Faculte des sciences, B.P. 1014, Rabat (Morocco)
Description
By ab-initio calculation we show that the (Ga,Fe)N ground state may be changed from anti-ferromagnetic to ferromagnetic by acceptor defect like Ga vacancies. The electronic structures are calculated by using the Korringa-Kohn-Rostoker (KKR) method combined with coherent potential approximation (CPA). We show that we can increase the magnetic moment of Fe in p-type GaN by oxygen co-doping. Mechanism of exchange interactions between magnetic ions in p-type (Ga,Fe)N is also studied. The effect of external magnetic field on the electronic structure of (Ga, Fe)N and p-type (Ga, Fe)N is investigated.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jmmm.2009.02.140Additional details
Identifiers
- DOI
- 10.1016/j.jmmm.2009.02.140;
- PII
- S0304-8853(09)00195-4;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 321
- Journal Issue
- 16
- Journal Page Range
- p. 2402-2406
- ISSN
- 0304-8853
- CODEN
- JMMMDC
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41009853
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRONIC STRUCTURE; EXCHANGE INTERACTIONS; GALLIUM NITRIDES; GROUND STATES; MAGNETIC FIELDS; MAGNETIC MOMENTS; MAGNETIC SEMICONDUCTORS; OXYGEN; VACANCIES
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY LEVELS; GALLIUM COMPOUNDS; INTERACTIONS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PNICTIDES; POINT DEFECTS; SEMICONDUCTOR MATERIALS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.