Published May 29, 2013 | Version v1
Journal article

Compensation effect on the CW spin-polarization degree of Mn-based structures

  • 1. Instituto de Física Gleb Wataghin, CP 6165, UNICAMP, 13083–970 Campinas, SP (Brazil)
  • 2. Faculdade de Ciências Aplicadas, UNICAMP, 1344–350 Limeira, SP (Brazil)
  • 3. Physico-Technical Research Institute, Nizhny Novgorod State University, Nizhny Novgorod (Russian Federation)

Description

We investigated the effects of Mn ions on the spin dynamics of electrons confined in a semiconductor quantum well nearby a Mn-based ferromagnetic layer. Circularly polarized Hanle and time-resolved photoluminescence (PL) measurements were carried out on a set of samples with different Mn delta-doping concentrations. We observe a strong influence of the Mn layer for both the electron lifetime and its spin-relaxation time for high-Mn concentrations, when the electrons significantly overlap with Mn ions. Our results also show that the circular-polarization degree obtained by simple continuous-wave PL measurements is not sufficient to determine the relaxation dynamics due to a compensation effect of the lifetime and the spin-relaxation time. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0022-3727/46/21/215103

Additional details

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
46
Journal Issue
21
Journal Page Range
[6 p.]
ISSN
0022-3727
CODEN
JPAPBE