Published November 1994
| Version v1
Journal article
The effect of disordering and damping of charge carriers on the form of recombination radiation of electron-hole plasma in CdS
Creators
- 1. RAN, Chernogolovka (Russian Federation). Inst. Problem Tekhnologii Mikroehlektroniki
Description
The effect of disordering and damping the change carriers on the form of recombination radiation band of electron-hole plasma in CdS was studied. It is shown that the ideal plasma model with an account of the lifetime finiteness and heterogeneity in particle distribution may be applied for description of the M-bond by optical excitations and by increase in temperature. 8 refs.; 2 figs.; 2 tabs
Additional details
Additional titles
- Original title (Russian)
- Влияние неупорядоченности и затухания носителей заряда на форму полосы рекомбинационного излучения электронно-дырочной плазмы в CdS
Publishing Information
- Journal Title
- Fizika Tverdogo Tela
- Journal Volume
- 36
- Journal Issue
- 11
- Journal Page Range
- p. 3469-3472.
- ISSN
- 0367-3294
- CODEN
- FTVTAC
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 26054123
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CADMIUM SULFIDES; CARRIER LIFETIME; CHARGE CARRIERS; EMISSION SPECTRA; LUMINESCENCE; OPTICAL PUMPING; RECOMBINATION; SOLID-STATE PLASMA; TEMPERATURE RANGE 0013-0065 K
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; EMISSION; LIFETIME; PHOTON EMISSION; PLASMA; SPECTRA; SULFIDES; SULFUR COMPOUNDS; TEMPERATURE RANGE