Boron nitride hollow nanospheres: Synthesis, formation mechanism and dielectric property
- 1. School of Materials Science and Engineering, Harbin Institute of Technology at Weihai, Weihai 264209 (China)
- 2. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)
Description
Highlights: • BN hollow nanospheres are fabricated in large scale via a new CVD method. • Morphology and structure are elucidated by complementary analytical techniques. • Formation mechanism is proposed based on experimental observations. • Dielectric properties are investigated in the X-band microwave frequencies. • BN hollow nanospheres show lower dielectric loss than regular BN powders. - Abstract: Boron nitride (BN) hollow nanospheres have been successfully fabricated by pyrolyzing vapors decomposed from ammonia borane (NH3BH3) at 1300 °C. The final products have been extensively characterized by X-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy. The BN hollow nanospheres were ranging from 100 to 300 nm in diameter and around 30–100 nm in thickness. The internal structure of the products was found dependent on the reaction temperatures. A possible formation mechanism of the BN hollow nanospheres was proposed on the basis of the experimental observations. Dielectric measurements in the X-band microwave frequencies (8–12 GHz) showed that the dielectric loss of the paraffin filled by the BN hollow nanospheres was lower than that filled by regular BN powders, which indicated that the BN hollow nanospheres could be potentially used as low-density fillers for microwave radomes
Availability note (English)
Available from http://dx.doi.org/10.1016/j.materresbull.2014.12.048Additional details
Identifiers
- DOI
- 10.1016/j.materresbull.2014.12.048;
- PII
- S0025-5408(14)00805-8;
Publishing Information
- Journal Title
- Materials Research Bulletin
- Journal Volume
- 64
- Journal Page Range
- p. 61-67
- ISSN
- 0025-5408
- CODEN
- MRBUAC
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47045530
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BORON NITRIDES; CHEMICAL VAPOR DEPOSITION; DENSITY; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; FIELD EMISSION; MICROWAVE RADIATION; NANOSTRUCTURES; POWDERS; SCANNING ELECTRON MICROSCOPY; SYNTHESIS; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- BORON COMPOUNDS; CHEMICAL COATING; COHERENT SCATTERING; DEPOSITION; DIFFRACTION; DIMENSIONS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; EMISSION; MATERIALS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS; SCATTERING; SPECTROSCOPY; SURFACE COATING
Optional Information
- Copyright
- Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.