Effect of natural radiation on electronics: from constraint to prediction
Creators
- 1. Montpellier-2 Univ., Institut d'Electronique du Sud, 34 (France)
Description
Effects of natural environment of ionizing radiation on electronic device reliability, at ground and atmospheric level, is now a reality. With device down-scaling all the electronic systems are sensitive to this environment.The aim of this article is to give the essential order of magnitudes related to this topic. First, the natural ionizing radiation environment and more specifically the neutron environment is described. Highlights are given to consider the particular case of the reliability of most integrated technologies. Second, interactions between neutrons and device materials are reminded. Then the effects of those interactions on electrical response of SRAM memories, that means upsets, are analyzed. Principles of simulation tools used to predict those upsets are presented. (authors)
Additional details
Additional titles
- Original title (French)
- Effet des radiations naturelles sur l'electronique: de la contrainte a la prediction
Publishing Information
- Journal Title
- REE. Revue de l'Electricite et de l'Electronique
- Journal Issue
- no.3
- Journal Page Range
- p. 25-32
- ISSN
- 1265-6534
- CODEN
- REELF3
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 41047272
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CHARGE COLLECTION; CORRECTIONS; COSMIC SHOWERS; ELECTRODES; ERRORS; INELASTIC SCATTERING; IONIZATION; LOGIC CIRCUITS; MICROELECTRONIC CIRCUITS; MOS TRANSISTORS; NEUTRONS; PHYSICAL RADIATION EFFECTS; RECOMBINATION; RELIABILITY; SEMICONDUCTOR STORAGE DEVICES
- Descriptors DEC
- BARYONS; COSMIC RADIATION; ELECTRONIC CIRCUITS; ELEMENTARY PARTICLES; FERMIONS; HADRONS; IONIZING RADIATIONS; MEMORY DEVICES; NUCLEONS; RADIATION EFFECTS; RADIATIONS; SCATTERING; SECONDARY COSMIC RADIATION; SEMICONDUCTOR DEVICES; SHOWERS; TRANSISTORS
Optional Information
- Notes
- 10 refs.