Published September 2016
| Version v1
Journal article
The influence of the profile of impurity distribution on the parameters of varactors subjected to full hydrostatic compression
Creators
- 1. National University of Uzbekistan, Tashkent (Uzbekistan)
Description
The capacity-voltage dependence of a varactor made on the basis of the barrier Schottky, subjected to full hydrostatic compression up to 6 kBar is investigated. The strong dependence of barrier parameters on the type of profile of impurity distribution and on the value of the hydrostatic compression is shown. It is found that sensitivity of the varactor influenced pressure 6 kBar for 12 minutes increases. (author)
Additional details
Additional titles
- Original title (Russian)
- Влияние профиля распределения примеси на параметры варакторов, подвергнутых всестороннему гидростатическому сжатию
Publishing Information
- Journal Title
- Uzbekiston Fizika Zhurnali
- Journal Volume
- 18
- Journal Issue
- 5
- Journal Page Range
- p. 322-325
- ISSN
- 1025-8817
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 49058992
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CAPACITY; COMPRESSION; DIFFUSION BARRIERS; DISTRIBUTION; ELECTRIC POTENTIAL; HYDROSTATICS; IMPURITIES; N-TYPE CONDUCTORS; SCHOTTKY BARRIER DIODES; SENSITIVITY; SILICON DIODES; VARIABLE CAPACITANCE DIODES
- Descriptors DEC
- MATERIALS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS
Optional Information
- Notes
- 5 refs., 2 figs.