Published June 1, 2019 | Version v1
Journal article

Design of a low power, double throughput cyclic combinational gate diffusion input based radix-4 MBW multiplier and accumulator unit for on-chip RISC processors of MEMS sensor

  • 1. Department of Electronics and Communication Engineering, Neotia Institute of Technology Management and Science, Sarisa (India)
  • 2. Institute of Radio Physics and Electronics, University of Calcutta, Kolkata (India)

Description

Modern microsystems based on sensor specific structures have robust on-chip digital signal processors to process the input signals. In order to improve the robustness of the system, on-chip processor circuitry has to be fabricated in limited areas with low latency and low power consumption. In this paper, a new technique for implementing low-power, high performance multiplier and accumulator (MAC) unit has been introduced for on-chip microelectromechanical systems applications. Based on cyclic combinational gate diffusion input technique, the proposed MAC unit is designed using Radix-4 modified Booth Wallace multiplier architecture and can operate up to 100 MBps of input data acquisition rate. Our proposed design is made of single threshold voltage transistors which employ low latency and reduced power consumption and less complexity in physical design. CAD tool based simulation at Generic 250 nm technology and comparison between proposed design with other available designs shows that the proposed design is better than many other designs for similar range of operation. The proposed design has an average power consumption of 98.8 mw and propagation delay of 6.8 ns at input bit rate 100 MBps for 16 bit operands. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6439/ab1504

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Micromechanics and Microengineering (Print)
Journal Volume
29
Journal Issue
6
Journal Page Range
[12 p.]
ISSN
0960-1317
CODEN
JMMIEZ

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
51065560
Subject category
S42: ENGINEERING;
Descriptors DEI
DATA ACQUISITION; DESIGN; ELECTRIC POTENTIAL; MEMS; PERFORMANCE; SENSORS; SIGNALS; SIMULATION; TRANSISTORS
Descriptors DEC
DATA PROCESSING; PROCESSING; SEMICONDUCTOR DEVICES