Published May 12, 2010 | Version v1
Journal article

Interfacial properties and formation of a Schottky barrier at the CdS/PEDOT : PSS hybrid junction

  • 1. Taras Shevchenko Kyiv National University, pr. Glushkov 2/5, Kyiv 03022 (Ukraine)
  • 2. Institute of Semiconductor Physics, pr. Nauki 45, Kyiv 03028 (Ukraine)
  • 3. Institute of Bioorganic Chemistry and Petrochemistry, 50 Kharkivske shose, 02160, Kyiv (Ukraine)

Description

The behaviour of a hybrid heterojunction (HJ) of an inorganic semiconductor cadmium sulfide (CdS) single crystal (102 Ω cm) and an organic conducting polymer poly(3,4-ethylenedioxythiophene) : poly(styrene sulfonic acid) (PEDOT : PSS) has been studied using electrical and photoelectrical measurements as well as ultraviolet photoelectron spectroscopy (UPS) with in situ Ar ion etching. Photovoltaic data and current-voltage characteristics demonstrated that the HJ is a Schottky diode with an electron barrier height ca ψb = 0.5 eV. The estimates based on the energy balance at the interface allowed us to assert on the presence of an interfacial dipole with an energy offset of -0.3 eV. A dipole barrier of the same magnitude was also clearly revealed from the UPS measurements directly.

Availability note (English)

Available from http://dx.doi.org/10.1088/0022-3727/43/18/185301

Additional details

Identifiers

DOI
10.1088/0022-3727/43/18/185301;
PII
S0022-3727(10)36211-5;

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
43
Journal Issue
18
Journal Page Range
[10 p.]
ISSN
0022-3727
CODEN
JPAPBE