Ion bombardment effect on hydrogen content in boron thin films prepared by electron cyclotron resonance discharge of diluted decaborane gases

Boron thin films are prepared by electron cyclotron resonance discharge of decaborane gas diluted with helium gas. The dependence of the hydrogen content in the films on the bias voltage VB applied to substrates is investigated at the substrate temperature of 200degC. The hydrogen content are 2-3 at.% at VB=100-200 V, 6-11 at.% at VB=300 V and 9.3 at.% at VB=500 V. The bombardment of the ions with energies more than 300 V during the deposition increases the hydrogen content in the boron thin films. (author)