Published November 2000 | Version v1
Journal article Metadata-only

Stimulation of luminescence in graded-gap AlxGa1-xAs semiconductors

Creators

  • 1. Semiconductor Physics Institute, A. Gostauto 11, Vilnius, 2600 (Lithuania)

Description

The stimulation of photoluminescence in a graded-gap AlxGa1-xAs semiconductor was studied. It is shown that stimulation by external illumination makes it possible to increase the internal quantum yield of luminescence and specify the direction in which stimulated emission propagates. A method is proposed for measuring the internal quantum efficiency

Additional details

Identifiers

DOI
10.1134/1.1325425;

Publishing Information

Journal Title
Semiconductors
Journal Volume
34
Journal Issue
11
Journal Page Range
p. 1290-1294
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35051863
Subject category
S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
ALUMINIUM ARSENIDES; ENERGY GAP; EXPERIMENTAL DATA; GALLIUM ARSENIDES; PHOTOLUMINESCENCE; RADIATION DETECTION; SEMICONDUCTOR MATERIALS
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; DATA; DETECTION; EMISSION; GALLIUM COMPOUNDS; INFORMATION; LUMINESCENCE; MATERIALS; NUMERICAL DATA; PHOTON EMISSION; PNICTIDES

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 34, 1342-1346 (No. 11, 2000); (c) 2000 MAIK ''Nauka / Interperiodica''.