Published July 31, 2001 | Version v1
Journal article Metadata-only

Structural transitions in GaAs during irradiation by a 100-fs laser pulse

Creators

  • 1. Department of Physics, M.V. Lomonosov Moscow State University, Moscow (Russian Federation)

Description

It is shown experimentally for the first time that the pumping of a GaAs sample by a 100-fs laser pulse causes plasma-induced bandgap collapse and 'cold' melting of the material during the pulse. (letters)

Availability note (English)

Available from http://dx.doi.org/10.1070/QE2001v031n07ABEH002004

Additional details

Identifiers

DOI
10.1070/QE2001v031n07ABEH002004;

Publishing Information

Journal Title
Quantum Electronics (Woodbury, N.Y.)
Journal Volume
31
Journal Issue
7
Journal Page Range
p. 565-566
ISSN
1063-7818

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42049193
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
GALLIUM ARSENIDES; MELTING; OPTICAL PUMPING; PLASMA; PULSES; RADIATION EFFECTS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; PHASE TRANSFORMATIONS; PNICTIDES; PUMPING