Dislocation-related luminescence in silicon caused by oxygen ion implantation and subsequent annealing

Multiple implantation of oxygen ions with energies of 0.1-1.5 MeV at doses of 7 x 1013 - 2 x 1014 cm-2 and subsequent annealing in a chlorine-containing atmosphere at 900 grad C for 4 h give rise to dislocation-related luminescence in p-Si. The conversion of p-type conductivity into n-type conductivity is also observed in this case in the surface layer of Si, which indicates that electrically active donor centers are formed in this process. Preliminary heat treatment of wafers covered with an erbium-doped film of tetraethoxysilane in argon at 1250 grad C for 1 h does not preclude the appearance of dislocation-related luminescence, but affects the parameters of the dislocation-related lines (peak positions and intensities)