Mechanical, electronic structure, magnetic properties, and strain effects of quaternary Heusler alloy FeMnZnZ (Z = Si, Ge, Sn, Pb)
- 1. Department of Mathematics and Physics, Hebei University of Architecture, Zhangjiakou, 075000 (China)
- 2. Information Engineering College, Hebei University of Architecture, Zhangjiakou, 075000 (China)
Description
In this study, the electronic structure and mechanical and magnetic properties of quaternary Heusler alloy FeMnZnZ (Z = Si, Ge, Sn, Pb) were analyzed through first-principles calculations. The electronic band and density of the state of FeMnZnSi and FeMnZnGe indicated that they are half-metallic with an indirect and direct band gap of 0.329 and 0.342 eV, respectively. The magnetic moments derived from magnetic calculations suggested that both alloys satisfied the Slater–Pauling rule of Mt = Zt - 28 with a total magnetic moment of 3 µB. Moreover, the effects of the uniform strain of the lattice constant on the half-metallicity of alloys were analyzed. The lattice constants of FeMnZnSi and FeMnZnGe exhibited half-metallic properties ranging from − 5 to 21% and − 13 to 14%, respectively. Furthermore, after using Si as the lattice constant, FeMnZnZ (Z = Sn, Pb) exhibited a magnetic moment of 3 µB, which satisfied the Slater–Pauling rule of Mt = Zt - 28, and demonstrated half-metallic properties. Finally, the relationship between the changes in the total magnetic moment, atomic magnetic moment, half-metallic band gap, and lattice constant of this series of half-metallic alloys was examined. (author)
Additional details
Identifiers
Publishing Information
- Journal Title
- Indian Journal of Physics (Online)
- Journal Volume
- 97
- Journal Issue
- 13
- Journal Page Range
- p. 3867-3874
- ISSN
- 0974-9845
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 54108563
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BAND THEORY; GRADED BAND GAPS; IRON SILICIDES; MAGNETIC MOMENTS; MANGANESE SILICIDES; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- IRON COMPOUNDS; MANGANESE COMPOUNDS; MATERIALS; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS