Published November 2023 | Version v1
Journal article

Mechanical, electronic structure, magnetic properties, and strain effects of quaternary Heusler alloy FeMnZnZ (Z = Si, Ge, Sn, Pb)

  • 1. Department of Mathematics and Physics, Hebei University of Architecture, Zhangjiakou, 075000 (China)
  • 2. Information Engineering College, Hebei University of Architecture, Zhangjiakou, 075000 (China)

Description

In this study, the electronic structure and mechanical and magnetic properties of quaternary Heusler alloy FeMnZnZ (Z = Si, Ge, Sn, Pb) were analyzed through first-principles calculations. The electronic band and density of the state of FeMnZnSi and FeMnZnGe indicated that they are half-metallic with an indirect and direct band gap of 0.329 and 0.342 eV, respectively. The magnetic moments derived from magnetic calculations suggested that both alloys satisfied the Slater–Pauling rule of Mt = Zt - 28 with a total magnetic moment of 3 µB. Moreover, the effects of the uniform strain of the lattice constant on the half-metallicity of alloys were analyzed. The lattice constants of FeMnZnSi and FeMnZnGe exhibited half-metallic properties ranging from − 5 to 21% and − 13 to 14%, respectively. Furthermore, after using Si as the lattice constant, FeMnZnZ (Z = Sn, Pb) exhibited a magnetic moment of 3 µB, which satisfied the Slater–Pauling rule of Mt = Zt - 28, and demonstrated half-metallic properties. Finally, the relationship between the changes in the total magnetic moment, atomic magnetic moment, half-metallic band gap, and lattice constant of this series of half-metallic alloys was examined. (author)

Additional details

Identifiers

Publishing Information

Journal Title
Indian Journal of Physics (Online)
Journal Volume
97
Journal Issue
13
Journal Page Range
p. 3867-3874
ISSN
0974-9845

INIS

Country of Publication
India
Country of Input or Organization
India
INIS RN
54108563
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
BAND THEORY; GRADED BAND GAPS; IRON SILICIDES; MAGNETIC MOMENTS; MANGANESE SILICIDES; SEMICONDUCTOR MATERIALS
Descriptors DEC
IRON COMPOUNDS; MANGANESE COMPOUNDS; MATERIALS; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS