Published April 30, 2007
| Version v1
Journal article
Quantum-dot superluminescent diodes with improved performance
- 1. Superlum Diodes Ltd., Moscow (Russian Federation)
- 2. Moscow State Institute of Radio Engineering, Electronics and Automatics (Technical University), Moscow (Russian Federation)
Description
It is shown that optimisation of the structure of the active channel of quantum-dot InAs/AlGaAs/GaAs superluminescent diodes (SLDs) provides a noticeable increase in their external quantum efficiency. The output cw power coupled out of a single-mode fibre achieves 1.3 and 0.9 W for the emission bandwidth of 27 and 110 nm, respectively. The results of preliminary lifetime tests predict the high enough reliability of these SLDs. (lasers)
Availability note (English)
Available from http://dx.doi.org/10.1070/QE2007v037n04ABEH013465Additional details
Identifiers
Publishing Information
- Journal Title
- Quantum Electronics (Woodbury, N.Y.)
- Journal Volume
- 37
- Journal Issue
- 4
- Journal Page Range
- p. 331-333
- ISSN
- 1063-7818
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42060311
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ALUMINIUM ARSENIDES; DIODE TUBES; EMISSION; GALLIUM ARSENIDES; INDIUM ARSENIDES; LUMINESCENCE; OPTICAL FIBERS; OPTIMIZATION; QUANTUM DOTS; QUANTUM EFFICIENCY; RELIABILITY
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; EFFICIENCY; ELECTRON TUBES; EMISSION; FIBERS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES