What is the real value of diffusion length in GaN?

Highlights: • The applicability of SEM methods for diffusion length measurements in GaN is discussed. • The discussion is based on our own experiments and on the available literature data. • A study of EBIC dependence on beam energy suits well for a small diffusion length. • The most reliable diffusion length values in the state-of-the-art n-GaN are evaluated. - Abstract: The applicability of scanning electron microscopy methods for excess carrier diffusion length measurements in GaN is discussed. The discussion is based on author's experiments and on the available literature data. It is shown that for semiconductors with submicron diffusion length special attention should be paid to the choice of measuring method and experimental conditions. Some reasons for diffusion length overestimation and underestimation are analyzed. It is shown that a measurement of collected current dependence on electron beam energy is the most suitable method for submicron diffusion length evaluations because it is much easier to meet conditions for a proper application of this method than for other widely used methods. The analysis of data previously reported in literature and author's results have shown that the diffusion length values in the range from 70 to 400 nm are the most reliable for state-of-the-art n-GaN epilayers