Published 1971 | Version v1
Report Metadata-only

Investigations of ion implantation in silicon using particle channeling

Creators

Description

no abstract available

Availability note (English)

MF available from INIS under the Report Number.

Additional details

Publishing Information

Imprint Pagination
162 p.

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
3028661
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Thesis
Descriptors DEI
ANNEALING; BACKSCATTERING; CARBON IONS; CRYSTAL LATTICES; DEPTH; DISTRIBUTION; ENERGY; HELIUM IONS; ION CHANNELING; ION IMPLANTATION; MASS; ORDER-DISORDER TRANSFORMATIONS; OXYGEN IONS; RADIATION DOSES; SILICON; TEMPERATURE DEPENDENCE
Descriptors DEC
CHANNELING; CHARGED PARTICLES; CRYSTAL STRUCTURE; DIMENSIONS; ELEMENTS; HEAT TREATMENTS; IONS; PHASE TRANSFORMATIONS; SCATTERING; SEMIMETALS

Optional Information

Notes
University Microfilms Order No. 72-9628.