Published May 1, 2012 | Version v1
Journal article

Resolution, masking capability and throughput for direct-write, ion implant mask patterning of diamond surfaces using ion beam lithography

  • 1. CRANN Nanoscience Institute, School of Physics, Trinity College, Dublin 2 (Ireland)
  • 2. Raith GmbH, 44263 Dortmund (Germany)

Description

Direct-write, ion implant top surface imaging is a two-step nanopatterning method that simplifies and improves processing of diamond for various applications. The technique utilizes a low-dose (non-milling) gallium ion implant into the first few nanometers of the surface using a focused ion beam. The implanted regions form a hard mask to plasma etching allowing production of well-controlled high relief structures over the exposed surface. We demonstrate the ability of the process to fabricate high aspect ratio, high-resolution patterns over millimetre-size areas in all varieties of diamond including natural, synthetic HPHT and CVD films, at various levels of doping, for industrial scale applications. This paper sets significant new limits of resolution and masking capability for the technique, and compares throughput in comparison to other high resolution lithographic techniques. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0960-1317/22/5/055005

Additional details

Publishing Information

Journal Title
Journal of Micromechanics and Microengineering. Structures, Devices and Systems
Journal Volume
22
Journal Issue
5
Journal Page Range
[6 p.]
ISSN
0960-1317
CODEN
JMMIEZ