Tuning the number of chiral edge channels in a fixed quantum anomalous Hall system
- 1. Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- 2. Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, USA
- 3. Department of Physics, Fuzhou University, Fuzhou, Fujian 350108, China
- 4. International Center for Quantum Design of Functional Materials, CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Anhui 230026, China
- 5. Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
Description
Quantum anomalous Hall (QAH) insulators exhibit chiral edge channels characterized by vanishing longitudinal conductance and quantized Hall conductance of /, wherein the Chern number C is an integer equal to the number of the parallel chiral edge channels. These chiral edge channels conduct dissipationless transport in QAH insulators, making them pivotal for applications in low-consumption electronics and topological quantum computing. While the QAH effect with multiple chiral edge channels (i.e., C > 1) has been demonstrated in multilayers consisting of magnetic topological insulators and normal insulators, the channel number remains fixed for a given sample. Here, we unveil the tunability of the number of chiral edge channels within a single QAH insulator device. By tuning the magnetization of individual layers within the multilayer system, Chern insulating states with different Chern numbers are unveiled. The tunable Chern number was corroborated by our theoretical calculations. Furthermore, we conducted layer-dependent calculations to elucidate the contribution of the Chern number from different layers in the multilayer. Our findings demonstrate an extra degree of freedom in manipulating the chiral edge channels in QAH insulators. This tunability offers an extra dimension for the implementation of the QAH-based multichannel dissipationless transport.
Additional details
Identifiers
- DOI
- 10.1103/PhysRevB.109.L201402;
- arXiv
- arXiv:2401.02295;
- Crossref Funder ID
- 10.13039/501100001809; 10.13039/501100005089; 10.13039/100000001; 10.13039/100000183; 10.13039/501100009076; 10.13039/501100003392;
Publishing Information
- Journal Title
- Physical Review B
- Journal Volume
- 109
- Journal Issue
- 20
- Journal Page Range
- 7 pgs.
- ISSN
- 1550-235X
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CHIRALITY; COUPLINGS; DEGREES OF FREEDOM; DIELECTRIC MATERIALS; ELECTRICAL INSULATORS; HALL EFFECT; LAYERS; MAGNETIZATION; QUANTIZATION; QUANTUM SYSTEMS; SEMIMETALS; TOPOLOGY; TUNING
- Descriptors DEC
- ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; MATERIALS; MATHEMATICS; PARTICLE PROPERTIES
Optional Information
- Copyright
- ©2024 American Physical Society
- Contract/Grant/Project number
- 12304189; 11974327; 12004369; 1232035; 1936383; 2040737; W911NF-20-2-0166; 2022J05019
- Notes
- These authors contributed equally to this work.; Contact Email: Corresponding author: dengpeng@baqis.ac.cn; Contact Email: Corresponding author: qiao@ustc.edu.cn; Contact Email: Corresponding author: wang@ee.ucla.edu; Record automatically processed
- Funding organization
- National Natural Science Foundation of China; Beijing Municipal Natural Science Foundation; National Science Foundation; Army Research Office; University of Science and Technology of China; Natural Science Foundation of Fujian Province