Published December 2019 | Version v1
Journal article

Self-doubled-rectification of triboelectric nanogenerator

  • 1. Department of Microelectronics and Nanoelectronics, Tsinghua University, Beijing, 100084 (China)
  • 2. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245 (United States)
  • 3. Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences (China)
  • 4. School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049 (China)

Description

Highlights: • The first AC to DC conversion module optimized for TENG is proposed. • SDR-TENG can bring 2x voltage, 3x energy output and 4x peak power. • SDR-TENG can bring a doubled stable voltage and solve the asymmetric problem. -- Abstract: Power management strategies and the corresponding circuits are the unbypassable tough technologies toward practical applications of triboelectric nanogenerators (TENGs). To power electronics, there are two main tasks needed to be tackled for TENG, i.e., to convert the alternating current (AC) to direct current (DC), and to boost the energy output. In this work, we present a power management strategy named Self-doubled-rectification of TENG (SDR-TENG), which is the first AC to DC conversion method delicately customized based on the unique features of TENG. The SDR-TENG divides each operation cycle of the TENG into two periods with different output directions, and keeps the output of one period in the inner capacitor of the TENG and waits until the next period to be released all together. In this way, the voltage output can at most be doubled, the energy output increases two times, and the peak power output can be increased by a factor of four, compared to the traditional bridge rectification, separately. More importantly, SDR-TENG can be easily achieved through only two diodes and work compatibly with all other power management strategies. It is believed that this method may become a standard power management module and can further broaden the applications of TENG devices across fields.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nanoen.2019.104165

Additional details

Identifiers

DOI
10.1016/j.nanoen.2019.104165;
PII
S2211285519308729;

Publishing Information

Journal Title
Nano Energy (Print)
Journal Volume
66
Journal Page Range
vp.
ISSN
2211-2855

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
54122766
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALTERNATING CURRENT; ASYMMETRY; CAPACITORS; DIRECT CURRENT; PEAK LOAD
Descriptors DEC
CURRENTS; ELECTRIC CURRENTS; ELECTRICAL EQUIPMENT; EQUIPMENT

Optional Information

Copyright
Copyright (c) 2019 Elsevier Ltd. All rights reserved.