Optical and structural characterization of boron implanted gas

The authors discuss the effects of boron ion implants on the properties of undoped semi-insulating (100) GaAs single crystals. Raman scattering, Rutherford backscattering spectrometry (RBS) with ion channeling, double-crystal x-ray diffraction (DCD), photoreflectance spectroscopy, and electron paramagnetic resonance measurements are used to provide a more complete description of the implant damage. Multiple energy implants with total doses up to 1.5 x 1016 ions/cm2 generated uniformly damaged regions from the surface to various depths that exceed a micron. The boron implants caused substantial changes in the intensities and linewidths of the Raman spectra which were correlated with the damage indicated by the channeling measurements