Published March 1984
| Version v1
Journal article
The rotational population of sputtered N2 - evidence for hindered rotational states
Description
We report on the study of excited N2 molecules sputtered from a N+ implanted Si surface by an N+ ion beam. Analysis of how N2 emission intensity varies with implant dose suggests that N2 molecules are formed by recombination of N atoms before being collisionally ejected by the sputtering mechanism. Such N2 molecules, localized on the surface, must inevitably exhibit a quantum mechanical rotational configuration that differs from an isolated molecule in free space. We observed that the rotational state distribution implied by the rotational structure of the N2 emission is a non-Boltzmann distribution and we relate this to a hindered rotor configuration of the N2 molecule when localized on the surface. (orig.)
Additional details
Publishing Information
- Journal Title
- Nucl. Instrum. Methods Phys. Res., Sect. B
- Journal Volume
- 230
- Journal Issue
- 1-3
- Series
- CODEN: NIMBE.;Nucl. Instrum. Methods Phys. Res., Sect. B.
- Journal Page Range
- 479-483
- ISSN
- 0168-583X
Conference
- Title
- 10. international conference on atomic collisions in solids.
- Dates
- 18-22 Jul 1983.
- Place
- Bad Iburg (Germany, F.R.).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 15065362
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- DEPTH; EMISSION SPECTRA; EXPERIMENTAL DATA; ION IMPLANTATION; NITROGEN; NITROGEN IONS; QUANTUM NUMBERS; ROTATIONAL STATES; SILICON; SURFACES
- Descriptors DEC
- CHARGED PARTICLES; DATA; DIMENSIONS; ELEMENTS; ENERGY LEVELS; EXCITED STATES; INFORMATION; IONS; NONMETALS; NUMERICAL DATA; SEMIMETALS; SPECTRA