Published March 1984 | Version v1
Journal article

The rotational population of sputtered N2 - evidence for hindered rotational states

  • 1. Georgia Inst. of Tech., Atlanta (USA). School of Physics

Description

We report on the study of excited N2 molecules sputtered from a N+ implanted Si surface by an N+ ion beam. Analysis of how N2 emission intensity varies with implant dose suggests that N2 molecules are formed by recombination of N atoms before being collisionally ejected by the sputtering mechanism. Such N2 molecules, localized on the surface, must inevitably exhibit a quantum mechanical rotational configuration that differs from an isolated molecule in free space. We observed that the rotational state distribution implied by the rotational structure of the N2 emission is a non-Boltzmann distribution and we relate this to a hindered rotor configuration of the N2 molecule when localized on the surface. (orig.)

Additional details

Publishing Information

Journal Title
Nucl. Instrum. Methods Phys. Res., Sect. B
Journal Volume
230
Journal Issue
1-3
Series
CODEN: NIMBE.;Nucl. Instrum. Methods Phys. Res., Sect. B.
Journal Page Range
479-483
ISSN
0168-583X

Conference

Title
10. international conference on atomic collisions in solids.
Dates
18-22 Jul 1983.
Place
Bad Iburg (Germany, F.R.).

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
15065362
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
DEPTH; EMISSION SPECTRA; EXPERIMENTAL DATA; ION IMPLANTATION; NITROGEN; NITROGEN IONS; QUANTUM NUMBERS; ROTATIONAL STATES; SILICON; SURFACES
Descriptors DEC
CHARGED PARTICLES; DATA; DIMENSIONS; ELEMENTS; ENERGY LEVELS; EXCITED STATES; INFORMATION; IONS; NONMETALS; NUMERICAL DATA; SEMIMETALS; SPECTRA