Published February 15, 2005 | Version v1
Journal article

Metal-organic chemical vapor deposition of indium selenide films using a single-source precursor

  • 1. Manchester Materials Science Centre, School of Chemistry, University of Manchester, Oxford Road, Manchester M13 9PL (United KIngdom)

Description

Indium selenide thin films have been deposited on glass, Si(1 0 0) and polycrystalline GaAs substrates from In[(SeP iPr2)2N]2Cl precursor by aerosol-assisted (AA) and low-pressure (LP) metal-organic chemical vapor deposition (MOCVD). X-ray powder diffraction (XRPD) patterns of these films indicated the growth of hexagonal γ-In2Se3. The morphologies of films have been studied by scanning electron microscopy (SEM) and compositions have been determined by energy dispersive analysis of X-rays (EDAX) and X-ray photoelectron spectroscopy (XPS)

Additional details

Identifiers

DOI
10.1016/j.mseb.2004.05.044;
PII
S0921-5107(04)00530-6;

Publishing Information

Journal Title
Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
Journal Volume
116
Journal Issue
3
Journal Page Range
p. 391-394
ISSN
0921-5107
CODEN
MSBTEK

Optional Information

Copyright
Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.