Published June 1990
| Version v1
Journal article
Impurities in thermoelectric materials based on Bi2Te3
Description
Possible mechanisms of dissolving of the most probable background impurities in Bi2Te3 base materials were analyzed. It is shown that majority of impurities must form substitution solutions and manifest acceptor properties. Crystallization under conditions of ampule synthesis assists formation of complexes; their decomposition during extrusion with developed multiple dislocation slippage leads to partial compensation of extrusion inherent donor effect
Additional details
Additional titles
- Original title (Russian)
- Примеси в термоэлектрических материалах на основе Би
Publishing Information
- Journal Title
- Neorganicheskie Materialy
- Journal Volume
- 26
- Journal Issue
- 6
- Series
- Neorg. Mater.
- Journal Page Range
- 1199-1202
- CODEN
- NEOMB
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 23000407
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; BISMUTH TELLURIDES; CASTINGS; CRYSTALLIZATION; DISLOCATIONS; HIGH TEMPERATURE; IMPURITIES; RODS; SLIP; THERMOELECTRIC PROPERTIES; TRACE AMOUNTS
- Descriptors DEC
- BISMUTH COMPOUNDS; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; HEAT TREATMENTS; LINE DEFECTS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; TELLURIDES; TELLURIUM COMPOUNDS