Published July 2006 | Version v1
Journal article

Optical properties of Cu(In, Zn)Se2 thin films for solar sells

  • 1. Joint inst. of solid state and semiconductor physics, National academy of sciences of Belarus, Minsk (Belarus)
  • 2. Inst. of electronics, National academy of sciences of Belarus, Minsk (Belarus)
  • 3. Inst. fur mineralogie, kristallographie und materialwissenschaft, Univ. Leipzig, Leipzig (Germany)

Description

The aim of this work is the investigation of the optical properties of (CuInSe2)X - (2ZnSe)1-X solid solutions (CIZS) films with the zinc concentration in the range of 0.0 - 8.0 at. %. Photoluminescence and optical absorption spectra were measured at temperature from 80 to 300 K to characterize defects and structural quality. PL spectra at T = 300 K and 80 K had only one broad recombination band. The observed luminescence peak could be ascribed to donor-acceptor pair (DAP) recombination due to the native defect concentration. It was established that dependences of the band-gap energy and the luminescence peak position on the Zn content in CIZS thin films changed nonlinearly and had the minimal value at the Zn concentration about 2.5 - 3.0 at. %. (authors)

Availability note (English)

Available online at http://sfm.asm.md/moldphys/

Additional details

Identifiers

Publishing Information

Journal Title
Moldavian Journal of the Physical Sciences
Journal Volume
5
Journal Issue
3-4
Journal Page Range
p. 355-359
ISSN
1810-648X

Optional Information

Notes
9 refs., 4 figs.