Research on the growth of TIO2 thin films on SI (100) substrates using single molecular precursors by metal organic chemical vapor deposition

Full text: In this paper the growth of titanium dioxide TiO2 thin films on Si (100) substrates was carried out using a single molecular precursor at deposition temperature in the range of 300 to 700 deg C by the metal organic chemical vapor deposition MOCVD method. Titanium IV isopropoxide, Ti OCH CH , was used as a precursor without any carrier gas. Crack-free, anatase type TiO2 polycrystalline thin films with a stoichiometric ratio of Ti and O were successfully deposited on Si 100 at temperature as low as 500 deg C. XRD and TED data showed the formation of the highly oriented anatase phase with the 211 direction for the TiO2 thin films grown on Si(100) at below 500 deg C, whereas with increasing the deposition temperature to 700 deg C, the main film growth w χ direction was changed to be 200, suggesting a possibility of epitaxial thin film growth. Two distinct growth behaviors were observed from the Arrhenius plots. Below 500 deg C, the growth rate of TiO2is apparently limited the substrate temperature. The activation energy for TiO2 film deposition calculated in this region is approximately 77.9 kJ/mol, while that for a film grown above 500 deg C shows a negative value, indicating a predominant diffusion controlled deposition process. Using AlrTiO2/p-S2 metal-insulator semiconductor (MIS) diode structure, a dielectric constant was also obtained from a capacitance-voltage C/V curve to be 21. Copyright (2002) Australian Society for Electron Microscopy Inc