Published April 1987
| Version v1
Journal article
Application of X-ray methods for the investigation of structural effects caused by high-energy argon ion bombardment in silicon crystal
Description
The deformation of Si monocrystal plates (200 μm thick) after ion implantation with high-energy argon ions (44 MeV, 8.0 x 1013 i/cm2) has been studied using X-ray transmission topography. It was found that the value of the deformation is a function of the path of ions in the material. This was proved by measurements of the radius of the curvature and the diffraction contrast observed at X-ray topograms
Additional details
Publishing Information
- Journal Title
- Cryst. Res. Technol.
- Journal Volume
- 22
- Journal Issue
- 4
- Series
- Cryst. Res. Technol.
- Journal Page Range
- K59-K62
- ISSN
- 0232-1300
- CODEN
- CRTED
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 18083988
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ARGON ISOTOPES; CRYSTAL DEFECTS; ION BEAMS; ION IMPLANTATION; MONOCRYSTALS; SILICON; X-RAY DIFFRACTION
- Descriptors DEC
- BEAMS; COHERENT SCATTERING; CRYSTAL STRUCTURE; CRYSTALS; DIFFRACTION; ELEMENTS; SCATTERING; SEMIMETALS
Optional Information
- Notes
- Short note.