Hard-X-ray photoelectron diffraction from Si(001) covered by a 0-7-nm-thick SiO2 layer

X-ray photoelectron diffraction has become a common method to determine element-specific local atomic surface structure. The use of hard X-rays makes this method bulk-sensitive and capable of studying the atomic structure of new materials such as multilayers and buried layers. We present the first Cr Kα-excited angle-resolved photoelectron diffraction from Si(001) covered by a 0-7-nm-thick SiO2 layer and demonstrate the information depth of this technique. The measured results are compared with a cluster model simulation. (author)