Molecular dynamics study of deformation and fracture in a tantalum nano-crystalline thin film
- 1. Virginia Polytechnic Institute and State University, 445 Old Turner Street, Blacksburg, VA 24061 (United States)
- 2. Sandia National Laboratories, PO Box 969, Livermore, CA 94551-0969 (United States)
Description
We present results from molecular dynamics simulations of two nano-crystalline tantalum thin films that illuminate the variety of atomic-scale mechanisms of incipient plasticity. Sample 1 contains approximately 500 K atoms and 3 grains, chosen to facilitate study at 105 s−1 strain rate; sample 2 has 4.6 M atoms and 30 grains. The samples are loaded in uniaxial tension at deformation rates of 105–109 s−1, and display phenomena including emission of perfect 1/2〈1 1 1〉-type dislocations and the formation and migration of twin boundaries. It was found that screw dislocation emission is the first deformation mechanism activated at strain rates below 108 s−1. Deformation twins emerge as a deformation mechanism at higher strains, with twins observed to cross grain boundaries as larger strains are reached. At high strain rates atoms are displaced with the characteristic twin vector at a ratio of 3 : 1 (108 s−1) or 4 : 1 (109 s−1) to characteristic dislocation vectors. Fracture is nucleated through a nano-void growth process. Grain boundary sliding does not scale with increasing strain rate. Detailed analysis of nano-scale deformation using these tools enhances our understanding of deformation mechanisms in tantalum. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0965-0393/22/4/045010Additional details
Identifiers
Publishing Information
- Journal Title
- Modelling and Simulation in Materials Science and Engineering
- Journal Volume
- 22
- Journal Issue
- 4
- Journal Page Range
- [20 p.]
- ISSN
- 0965-0393
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47050959
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- COMPUTERIZED SIMULATION; DEFORMATION; FRACTURES; GRAIN BOUNDARIES; MOLECULAR DYNAMICS METHOD; NANOSTRUCTURES; PLASTICITY; SCREW DISLOCATIONS; STRAIN RATE; STRAINS; TANTALUM; THIN FILMS; VOIDS
- Descriptors DEC
- CALCULATION METHODS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISLOCATIONS; ELEMENTS; FAILURES; FILMS; LINE DEFECTS; MECHANICAL PROPERTIES; METALS; MICROSTRUCTURE; REFRACTORY METALS; SIMULATION; TRANSITION ELEMENTS